Quantum wells, like n-doped gallium arsenide quantum wells, GaAs/AlAs multiple quantum wells and indium gallium arsenide quantum well, are subject to ongoing research as shown in figure 1 and 2. A lot of the reported synthesis procedures include molecular beam epitaxy (MBE), precipitation or spin coating during the preparation. Amongst the most actively researched properties of quantum wells are emission, band gap and sheet resistance. Very often quantum wells are characterized by either photoluminescence, UV or UV-Vis spectroscopy. High impact articles within this field report applications in optoelectronics, lasers or power generation.