Loading ...

InN film

Based on

3 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium(III) nitride

indium nitride
Type Single Compound
Formula InN
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
binding energy

More information/entries available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
luminescence spectroscopy

More information/entries available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • GaN/AlGaN
  • trimethylindigane
See all (4)
  1. NF3rqSzfaTiTUqo462wyliCsDrO
  2. CBAxR9yzr3Smm
  3. RzwxYfZfvOCiSqKN1h
  4. aANc5ZaRwCbnOVWiboc1owjaxS0B0jGM649gZd0AqC
  5. vJQ9V8zRaftyKv42g
Product

InN film

RMS roughness: 20 nm

Thickness: ~ 170 nm

Medium: none

Support: GaN/AlGaN

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • GaN/AlGaN
  • trimethylindigane
See all (4)
  1. TZAmnvEwVlYbu6RE8wH4p9Cj8FX
  2. YdVUEtYrdRHwQ
  3. ArPvp63PxdI3fzOGgr0
  4. paK4p95TDD2nk54pKXW0jjiThMZsohntdpfsr4pFLZ
  5. Iq6VET8nB69O97gIt
Product

InN film

RMS roughness: 33 nm

Thickness: ~ 170 nm

Medium: none

Support: GaN/AlGaN

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • GaN/AlGaN
  • trimethylindigane
See all (4)
  1. kV0hjLIMEhFz1rI1f14ldeebcSp
  2. ROORbPG4dJzri
  3. yIghH7cWRwFw8GE8pq
  4. ihvrfINHfVY9l42w6CC7v5Id3SK8DkJLAPO38pvumFbB
  5. L4ocRz5OmnqxaOOti
Product

InN film

RMS roughness: 7 nm

Thickness: ~ 170 nm

Medium: none

Support: GaN/AlGaN

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • GaN/AlGaN
  • trimethylindigane
See all (4)
  1. gltgMgjy4ltuVbDBITdDALqakXH
  2. hTiG5Axz4NHrA
  3. tGpGhfUdAZkVw9rjCZ
  4. QcbZLsewBp9oJiQ2yx1UkQUJk8eTbrxZ5psrtnng6L
  5. q9FsRx8elFp318WpX
Product

InN film

Thickness: ~ 170 nm

Medium: none

Support: GaN/AlGaN

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • GaN/AlGaN
  • trimethylindigane
See all (4)
  1. xs79f0jpCa0heDepovjJFKEK4B6
  2. n2Fw78ffxOQNs
  3. 1oDcqLpPIt5saD4npW
  4. Jh8RNRDTLS9HQX5e89EXBCUqMukJK2Z0PFv3RwdYS8
  5. ExsKrcpG0AujTuocX
Product

InN film

RMS roughness: 14 nm

Thickness: ~ 170 nm

Medium: none

Support: GaN/AlGaN

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial