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light-emitting element structure

Based on

1 Patents
2011 Most recent source

Composition

1

silicon oxide-containing indium tin oxide

silicon oxide-containing ITO
Type Complex Compound
Formula
Role layer
2

4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine/molybdenum(VI) oxide mixture

Type Complex Compound
Formula
Role layer
3

4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine

BPAFLP
Type Single Compound
Formula C43H31N
Role layer
4

9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole/N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-N,N'-diphenyl-pyrene-1,6-diamine mixture

CzPA/1,6-FLPAPrn mixture
Type Complex Compound
Formula
Role layer
5

9-[4-(N-carbazolyl)phenyl]-10-phenylanthracene

9-[4-(N-carbazolyl)]phenyl-10-phenylanthracene 9-[4-(N-carbazolyl)phenyl]-10-phenylanthracene CzPA
Type Single Compound
Formula C38H25N
Role layer
6

4,7-diphenyl-1,10-phenanthroline

bathophenanthroline Ph2phen BPhen Bphen
Type Single Compound
Formula (C6H5)2C12H6N2
Role layer
7

lithium(I) oxide

lithium oxide lithia
Type Single Compound
Formula Li2O
Role layer
8

copper phthalocyanine blue

copper(II) phthalocyanine copper phthalocyanine Pigment Blue 15:4 Pigment Blue 15 pigment Blue C.I. 15:4 CoPc CuPC CuPc
Type Single Compound
Formula C32H16CuN8
Role layer
9

4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine/molybdenum(VI) oxide mixture

Type Complex Compound
Formula
Role layer

Applications

Area Application Nanomaterial Variant Source
lighting devices

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon oxide-containing indium tin oxide
  1. 3X39PzT8VHlgQvJnfP
Product

light-emitting element structure

Thickness: 0.1 nm

Thickness: 10 nm

Thickness: 100 nm

Thickness: 110 nm

Thickness: 15 nm

Thickness: 2 nm

Thickness: 30 nm

Thickness: 5 nm

Medium/Support: none

References

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