Loading ...

indium phosphine with indium gallium arsenide multiple quantum well nanopillar array

Based on

1 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

Te-doped InP

Te-InP n-InP
Type Complex Compound
Formula
Role core
2

indium gallium arsenide/indium phosphine quantum well

InGaAs/InP QW
Type Nano Material
Formula
Role layer
3

Te-doped InP

Te-InP n-InP
Type Complex Compound
Formula
Role layer

Applications

Area Application Nanomaterial Variant Source
lasers

More information available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
photoluminescence

More information/entries available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • diethyltellurium
  • tri-n-butylphosphine
  • trimethylindigane
  1. PdujYuJwzamlU88tAYlRcR8sN6
  2. ozhVTnT
Product

indium phosphine with indium gallium arsenide multiple quantum well nanopillar array

Periodicity: ~ 500 nm

Thickness: 60 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • diethyltellurium
  • tri-n-butylphosphine
  • trimethylindigane
  1. JzWP7AbkYBvJfZOxmFnnhlWrKO
  2. AtSDuzA
Product

indium phosphine with indium gallium arsenide multiple quantum well nanopillar array

Periodicity: ~ 3000 nm

Thickness: 60 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • diethyltellurium
  • tri-n-butylphosphine
  • trimethylindigane
  1. tdhpOjUuXlYgf8BafmU7CLZZOg
  2. aXs9jv3
Product

indium phosphine with indium gallium arsenide multiple quantum well nanopillar array

Periodicity: ~ 10000 nm

Thickness: 60 nm

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial