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GaN nanowires/AlN/n-type doped (111)Si

Based on

1 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

aluminium nitride

aluminum nitride
Type Single Compound
Formula AlN
Role layer
2

poly(methyl methacrylate)

methyl methacrylate resin PMMA
Type Polymer
Formula
Role layer
3

GaN nanowires

Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
average piezo-generated output power density dependent on force

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Applications

Area Application Nanomaterial Variant Source
power generation

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

GaN nanowires/AlN/n-type doped (111)Si

Exposed length: 15 - 45 nm

Medium: none

Support: n-type doped Si

Method 2

Type: Physical formation
Source:
Starting materials
Product

GaN nanowires/AlN/n-type doped (111)Si

Exposed length: 226 - 356 nm

Medium: none

Support: n-type doped Si

References

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