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FeSx film

Based on

1 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

iron sulfide

Type Single Compound
Formula FeS(x)
Role raw materials

Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • Si wafer
  • bis(N,N'-di-tert-butylacetamidinato)iron(II)
  1. qw0VM
  2. 4IxUgObCr
  3. C5y92FnplVhZQImchKQ84h5
Product

FeSx film

RMS roughness: ~ 2.4 nm

Thickness: ~ 20 nm

Medium: none

Support: Si wafer

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • Si wafer
  • bis(N,N'-di-tert-butylacetamidinato)iron(II)
  1. b1TEd
  2. 6oEWBzNT6
  3. fUVZJ1pMHogGKzLMajLkUaC
Product

FeSx film

RMS roughness: ~ 3.2 nm

Thickness: ~ 20 nm

Medium: none

Support: Si wafer

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • Si wafer
  • bis(N,N'-di-tert-butylacetamidinato)iron(II)
  1. YLxwI
  2. d0XyPgJxm
  3. WsfdM0jBBLRMbWIPWR8IEgQ
Product

FeSx film

RMS roughness: ~ 2.1 nm

Thickness: ~ 20 nm

Medium: none

Support: Si wafer

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • Si wafer
  • bis(N,N'-di-tert-butylacetamidinato)iron(II)
  1. glZRJ
  2. FXdGhjWt3
  3. LQ7aHZubtCgzPBW4PKUoYM1
Product

FeSx film

RMS roughness: ~ 2.1 nm

Thickness: ~ 20 nm

Medium: none

Support: Si wafer

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • Si wafer
  • bis(N,N'-di-tert-butylacetamidinato)iron(II)
  1. XgGZa
  2. eFeR5lqsS
  3. tRdANMsc8o9GpsU0LppFqWi
Product

FeSx film

Thickness: ~ 20 nm

Medium: none

Support: Si wafer

References

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