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IIDDT-C3 polymer film on HMDS-treated SiO2

Based on

1 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

IIDDT-C3

Type Polymer
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
hole mobility

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • IIDDT-C3
  1. aO6EpNxUBZBSKJFRhfm
  2. JCcR8v2H9ef9MOxBpmjQsJJKn63vL
Product

IIDDT-C3 polymer film on HMDS-treated SiO2

Roughness: 1.4 nm

Medium: none

Support: poly(methyl methacrylate)-coated SiO2

Method 2

Type: Physical formation
Source:
Starting materials
  • IIDDT-C3
  1. zGDOl6UvP3FcO6OW5rn
  2. LO42H9HjHeKwx2H8vygcKePRZIgCA
Product

IIDDT-C3 polymer film on HMDS-treated SiO2

Fibril length: ~ 1000 nm

Fibril width: ~ 30 nm

Thickness: 9.28 nm

Medium: none

Support: hexamethyldisilazane-treated SiO2

Method 3

Type: Physical formation
Source:
Starting materials
  • hexamethyldisilazane-treated SiO2
  • IIDDT-C3
  1. UIbWn3RyidDSE3LQRzV
Product

IIDDT-C3 polymer film on HMDS-treated SiO2

Thickness: 2.6 nm

Medium: none

Support: hexamethyldisilazane-treated SiO2

Method 4

Type: Physical formation
Source:
Starting materials
  • IIDDT-C3
  1. KtBdaGOIUWmJV6SWePV
  2. l3HW3VwD92U47CIhAS6gN0N0jMOrw
Product

IIDDT-C3 polymer film on HMDS-treated SiO2

Roughness: 1 nm

Thickness: 12.5 nm

Medium: none

Support: CYTOP-coated SiO2

Method 5

Type: Physical formation
Source:
Starting materials
  • octadecyltrichlorosilane-treated SiO2
  • IIDDT-C3
  1. uOx3PnkeGzpS0Oypu19
Product

IIDDT-C3 polymer film on HMDS-treated SiO2

Roughness: 1.3 nm

Thickness: 3.3 nm

Medium: none

Support: octadecyltrichlorosilane-treated SiO2

References

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