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InAs nanowire array/pit-patterned GaSb(111)A

Based on

1 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium antimonide

GaSb(110)
Type Single Compound
Formula GaSb
Role raw materials
2

InAs nanowires

Type Nano Material
Formula
Role layer

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium antimonide
  1. FmoSZcl
  2. 2h9anXUAus
Product

InAs nanowire array/pit-patterned GaSb(111)A

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • gallium antimonide
  1. 0DTcXGw
  2. cT5zyrVy0B
Product

InAs nanowire array/pit-patterned GaSb(111)A

Size: not specified

Medium/Support: none

References

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