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In0.53Ga0.47As-capped (Ge/InAlAs nanocomposite)/InAlAs multilayer structure

Based on

1 Articles
2017 Most recent source

Composition

1

indium aluminium arsenide

Type Single Compound
Formula In0.52Al0.48As
Role layer
2

Ge/InAlAs nanocomposite

Type Nano Material
Formula
Role layer
3

indium aluminium arsenide

Type Single Compound
Formula In0.52Al0.48As
Role layer
4

Ge/InAlAs nanocomposite

Type Nano Material
Formula
Role layer
5

indium aluminium arsenide

Type Single Compound
Formula In0.52Al0.48As
Role layer
6

indium aluminium arsenide

indium gallium arsenide InGaAs
Type Single Compound
Formula In0.53Ga0.47As
Role layer

Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
transmission electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • diatomic arsenic
  • aluminium
  • indium(III) phosphide
See all (4)
  1. 4CeRtv
Product

In0.53Ga0.47As-capped (Ge/InAlAs nanocomposite)/InAlAs multilayer structure

Thickness: 2 nm

Thickness: 200 nm

Medium: none

Support: indium(III) phosphide

References

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