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Au nanorods dimer assembly in HSQ sidewalls-decorated straight-edged traps-patterned silicon nitride substrate

Based on

1 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

hydrogen silsesquioxane sidewalls-decorated straight-edged traps-patterned silicon

Type Nano Material
Formula
Role layer
2

gold nanorods

GNR
Type Nano Material
Formula
Role layer

Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
electron energy-loss spectroscopy

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Preparation

Method 1

Type: Physical formation
Source:
  1. jIPZpfbp6y7tc6JsY6
  2. RocCuYFqVG9lL19veCLSD1vrcwBivA
Product

Au nanorods dimer assembly in HSQ sidewalls-decorated straight-edged traps-patterned silicon nitride substrate

Dimer bridge length: 15 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
  1. x62vhCxJua4hzOU95I
  2. zfJNp2ytmP2uyT22IYFQqecec4E8Oy
Product

Au nanorods dimer assembly in HSQ sidewalls-decorated straight-edged traps-patterned silicon nitride substrate

Dimer gap: 1 nm

Medium/Support: none

References

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