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GaAs/InxGa1-xAs/GaAs core-shell-shell nanowire heterostructures

Based on

2 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium arsenide

Type Single Compound
Formula GaAs
Role core
2

indium gallium arsenide

indium gallium arsenide In0.5Ga0.5As
Type Complex Compound
Formula
Role layer
3

gallium arsenide

Type Single Compound
Formula GaAs
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
axial strain

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
cathodoluminescence spectroscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • n-type Si/SiO2
  1. 7c8ZzE
  2. 3T3UkP
  3. nthhZYQG
Product

GaAs/InxGa1-xAs/GaAs core-shell-shell nanowire heterostructures

Diameter: 40 nm

Thickness: ~ 18 nm

Medium: none

Support: n-type Si

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • n-type Si/SiO2
  1. Amtl4u
  2. gwDp0P
  3. oNtDRsM4
Product

GaAs/InxGa1-xAs/GaAs core-shell-shell nanowire heterostructures

Diameter: 140 nm

Thickness: ~ 29 nm

Thickness: ~ 35 nm

Medium: none

Support: n-type Si

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • n-type Si/SiO2
  1. JXvpdK
  2. DXz78E
  3. RF136Gg2
Product

GaAs/InxGa1-xAs/GaAs core-shell-shell nanowire heterostructures

Diameter: 40 nm

Thickness: ~ 18 nm

Medium: none

Support: n-type Si

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • n-type Si/SiO2
  1. Oq96qj
  2. NSG3Fj
  3. lTf1vGNt
Product

GaAs/InxGa1-xAs/GaAs core-shell-shell nanowire heterostructures

Diameter: 140 nm

Thickness: ~ 31.5 nm

Thickness: ~ 35 nm

Medium: none

Support: n-type Si

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • n-type Si/SiO2
  1. bKwUZ6
  2. pux3fj
  3. yKhLhg9p
Product

GaAs/InxGa1-xAs/GaAs core-shell-shell nanowire heterostructures

Diameter: 40 nm

Thickness: ~ 18 nm

Medium: none

Support: n-type Si

References

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