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Based on

28 Articles
3 Patents
2018 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap

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Applications

Area Application Nanomaterial Variant Source
electrodes/electrolytes

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. 78zTGv
  2. Y1L99S
Product

GaAs film

Hole bottom diameter: ~ 250 nm

Hole depth: ~ 35 nm

Hole opening diameter: ~ 1050 nm

Thickness: 100 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  1. nHQuMH
  2. ptJH4
Product

GaAs film

Hole depth: ~ 68 nm

Thickness: 100 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  1. HX13jC
  2. Zn3LKP
Product

GaAs film

RMS roughness: < 0.6 nm

Thickness: 25 nm

Medium: none

Support: Ga-terminated MLG

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  1. r5NRLN
Product

GaAs film

Thickness: 100 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  1. E59UfcZ
  2. QJi4tS
  3. ppoB9
Product

GaAs film

Hole depth: ~ 64 nm

Thickness: 100 nm

Medium/Support: none

References

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