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C/poly-Si/3C-SiC/4H-SiC structure

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

cubic silicon carbide

silicon carbide carborundum 3C-SiC
Type Single Compound
Formula SiC
Role layer
2

polycrystalline silicon

crystalline silicon polycrystalline Si poly silicon poly-silicon polysilicon silicon poly-Si pc-Si p-Si Si
Type Single Compound
Formula Si
Role layer
3

graphitic carbon

Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
potential energy

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Characterization

Method Nanomaterial Variant Source
electron energy-loss spectroscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • doped silicon carbide
  1. gWbDOMS0an
  2. q5oqODtv
  3. 7gk6qarttiB19NviDzealu
Product

C/poly-Si/3C-SiC/4H-SiC structure

Thickness: ~ 1.3 nm

Thickness: ~ 13 nm

Medium: none

Support: doped silicon carbide

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • doped silicon carbide
  1. lKUYzeBgDq
  2. BGDcSuy
  3. llfrLITiIZL6CWxlbJl2Tm
Product

C/poly-Si/3C-SiC/4H-SiC structure

Thickness: ~ 14.3 nm

Thickness: ~ 2.5 - ~ 2.5 nm

Thickness: ~ 5 nm

Medium: none

Support: doped silicon carbide

References

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