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In0.25Ga0.75N/GaN single quantum well

Based on

1 Articles
2016 Most recent source

Composition

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

In0.25Ga0.75N

Type Nano Material
Formula
Role layer
3

p-doped GaN

p-GaN
Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electron-hole wavefunctions overlap dependent on dopants concentration

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • sapphire
  1. RTVHEK
Product

In0.25Ga0.75N/GaN single quantum well

Size: not specified

Medium: none

Support: sapphire

References

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