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NiMnSb/In0.53Ga0.47As film on InP

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium aluminium arsenide

indium gallium arsenide InGaAs
Type Single Compound
Formula In0.53Ga0.47As
Role layer
2

NiMnSb

Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
anisotropic magnetoresistance dependent on sample crystal direction

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium(III) phosphide
  • indium
See all (4)
  1. E9ziow
Product

NiMnSb/In0.53Ga0.47As film on InP

Length: 40000 nm

Thickness: 200 nm

Thickness: 37 nm

Width: 4000 nm

Medium: none

Support: indium(III) phosphide

References

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