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GaAs nanobeam with randomly distributed self-assembled InGaAs QD

Based on

2 Articles
2016 Most recent source

Composition

1

gallium arsenide

Type Single Compound
Formula GaAs
Role raw materials
2

indium gallium arsenide quantum dots

InGaAs QD
Type Nano Material
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
absolute contrast of QD spin readout

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
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Product

GaAs nanobeam with randomly distributed self-assembled InGaAs QD

Height: 140 nm

Length: 15000 nm

Width: 280 nm

Medium/Support: none

References

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