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InGaN/GaN dot-in-nanowire structures

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

InGaN/GaN quantum dots

Type Nano Material
Formula
Role layer
3

gallium nitride

Type Single Compound
Formula GaN
Role layer

Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • n-doped gallium nitride
  1. EV5Zwc1X
Product

InGaN/GaN dot-in-nanowire structures

Diameter: 159 nm

Spacing: ~ 72 nm

Thickness: ~ 150 nm

Thickness: ~ 350 nm

Medium: none

Support: n-doped gallium nitride

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • n-doped gallium nitride
  1. hl1SjrNC
Product

InGaN/GaN dot-in-nanowire structures

Diameter: 130 nm

Spacing: ~ 72 nm

Thickness: ~ 150 nm

Thickness: ~ 350 nm

Medium: none

Support: n-doped gallium nitride

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • n-doped gallium nitride
  1. OpdIsSiq
Product

InGaN/GaN dot-in-nanowire structures

Diameter: 175 nm

Spacing: ~ 72 nm

Thickness: ~ 150 nm

Thickness: ~ 350 nm

Medium: none

Support: n-doped gallium nitride

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • n-doped gallium nitride
  1. Bhmoh3n6
Product

InGaN/GaN dot-in-nanowire structures

Diameter: 180 nm

Thickness: ~ 150 nm

Thickness: ~ 350 nm

Medium: none

Support: n-doped gallium nitride

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • n-doped gallium nitride
  1. oApxiK37
Product

InGaN/GaN dot-in-nanowire structures

Diameter: 90 nm

Spacing: ~ 72 nm

Thickness: ~ 150 nm

Thickness: ~ 350 nm

Medium: none

Support: n-doped gallium nitride

References

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