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oxide-coated In0.64Ga0.36As nanowires

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium gallium arsenide

Type Single Compound
Formula In0.64Ga0.36As
Role core
2

In/Ga/As oxides

Type Complex Compound
Formula
Role layer

Characterization

Method Nanomaterial Variant Source
photoluminescence

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

oxide-coated In0.64Ga0.36As nanowires

Diameter: 136 nm

Length: 930 - 970 nm

Pattern pitch: 250 nm

Thickness: 1 - 1.5 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
Product

oxide-coated In0.64Ga0.36As nanowires

Diameter: 142 nm

Length: 930 - 970 nm

Pattern pitch: 250 nm

Thickness: 1 - 1.5 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
Product

oxide-coated In0.64Ga0.36As nanowires

Diameter: 148 nm

Length: 930 - 970 nm

Pattern pitch: 250 nm

Thickness: 1 - 1.5 nm

Medium/Support: none

References

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