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n-type silicon passivated by TiO2 film

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

titanium dioxide (anatase)

anatase
Type Single Compound
Formula TiO2
Role layer
2

phosphorus-doped silicon

P-doped Si n-type Si
Type Complex Compound
Formula
Role layer
3

titanium dioxide (anatase)

anatase
Type Single Compound
Formula TiO2
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
effective charge carrier lifetime

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • boron-doped silicon
  • titanium tetrachloride
  • water
  1. pGhpreQhOdV8zHnHgS6ptgXdbC
Product

n-type silicon passivated by TiO2 film

Thickness: 250000 nm

Thickness: 4.5 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • titanium tetrachloride
  • water
  • phosphorus-doped silicon
  1. xkaVc1kp3dxmLXLh70TSHcXHkz
Product

n-type silicon passivated by TiO2 film

Thickness: 190000 nm

Thickness: 4.5 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • titanium tetrachloride
  • water
  • phosphorus-doped silicon
  1. UMtFJUask7ophE0LK8ITtwmqpB
Product

n-type silicon passivated by TiO2 film

Thickness: 190000 nm

Thickness: 4.5 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • titanium tetrachloride
  • water
  • phosphorus-doped silicon
  1. EYqRpTLXB8hpfinYA3i9AiRI0F
Product

n-type silicon passivated by TiO2 film

Thickness: 190000 nm

Thickness: 5.5 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • boron-doped silicon
  • titanium tetrachloride
  • water
  1. S5YVrllagaRK6GTFVlKuOmvwah
Product

n-type silicon passivated by TiO2 film

Thickness: 250000 nm

Thickness: 3.5 nm

Medium/Support: none

References

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