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Ga0.94Mn0.06As/AlAs/GaAs:Be quantum well array

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

Be-doped GaAs

GaAs:Be
Type Complex Compound
Formula
Role layer
2

aluminium arsenide

aluminum arsenide
Type Single Compound
Formula AlAs
Role layer
3

gallium manganese arsenide

Type Single Compound
Formula Ga0.94Mn0.06As
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
Curie temperature

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Characterization

Method Nanomaterial Variant Source
scanning tunneling spectroscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  • beryllium
Product

Ga0.94Mn0.06As/AlAs/GaAs:Be quantum well array

Diameter: 200000 nm

Thickness: 100 nm

Thickness: 5 nm

Thickness: 6 - 16 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • beryllium
  • gallium
Product

Ga0.94Mn0.06As/AlAs/GaAs:Be quantum well array

Diameter: 200000 nm

Thickness: 100 nm

Thickness: 11 nm

Thickness: 5 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  • beryllium
Product

Ga0.94Mn0.06As/AlAs/GaAs:Be quantum well array

Diameter: 200000 nm

Thickness: 1 - 19 nm

Thickness: 100 nm

Thickness: 5 nm

Medium/Support: none

References

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