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n-Si/SiO2/TiO2 heterojunction

Based on

5 Articles
1 Patents
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role layer
2

titanium(IV) oxide

titanium dioxide titanium oxide titania
Type Single Compound
Formula TiO2
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
acetone degradation under irradiation

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Applications

Area Application Nanomaterial Variant Source
coatings

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Characterization

Method Nanomaterial Variant Source
UV

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • phosphorus-doped silicon
  • oxygen
  1. 3OW4fo
Product

n-Si/SiO2/TiO2 heterojunction

Thickness: 5.5 nm

Thickness: ~ 1.2 nm

Medium: none

Support: phosphorus-doped silicon

Method 2

Type: Physical formation
Source:
Starting materials
  1. xAqE5VoIWXOcCEtp4GcdBoxlvOOCvl3b9obUrkX0WTjiy
  2. NhW3La
Product

n-Si/SiO2/TiO2 heterojunction

Thickness: 3.5 nm

Thickness: ~ 1.2 nm

Medium: none

Support: phosphorus-doped silicon

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • phosphorus-doped silicon
  • oxygen
  1. bxWXnF
Product

n-Si/SiO2/TiO2 heterojunction

Thickness: 3.5 nm

Thickness: ~ 1.2 nm

Medium: none

Support: phosphorus-doped silicon

Method 4

Type: Physical formation
Source:
Starting materials
  1. diS1ocEnzjcT9aJWVuxJJganGyDxGI8VQUKDScuP6lUnu
  2. pUvyaj
Product

n-Si/SiO2/TiO2 heterojunction

Thickness: 4.5 nm

Thickness: ~ 1.2 nm

Medium: none

Support: phosphorus-doped silicon

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • phosphorus-doped silicon
  • oxygen
  1. nsIgI8
Product

n-Si/SiO2/TiO2 heterojunction

Thickness: 4.5 nm

Thickness: ~ 1.2 nm

Medium: none

Support: phosphorus-doped silicon

References

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