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Zn-doped GaAs nanowires

Based on

10 Articles
2018 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

Zn-doped GaAs

p-type GaAs p-GaAs
Type Complex Compound
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge density distribution dependent on precursor ratio

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Applications

Area Application Nanomaterial Variant Source
diagnostics

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • p-type silicon
  • beryllium
See all (4)
  1. L69qzvfhWPcPag6asFsK
Product

Zn-doped GaAs nanowires

Size: not specified

Medium: none

Support: p-type silicon

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • diethylzinc
  • arsine
  • trimethanidogallium
  1. gGkVZw2FUlGPJ1ri1FBoTs1QCIZN0D318BHCPMfkW7KEkRD4X3JrSesgCcwiVXEskRavyYZn
  2. vpdoPCfzf7NlRbAVyZN
  3. sEa5NW
Product

Zn-doped GaAs nanowires

Diameter: ~ 170 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • diethylzinc
  • arsine
  • trimethanidogallium
  1. NLfBgn3ZjghN9efm9eXz7THb4py9A2kYguQd8Um0cvYcEpASJ0wZQTFtfE1LXFhZbBSj6Yby
  2. NG2E302yQcUi9ShqtT7
  3. hxMefb
Product

Zn-doped GaAs nanowires

Diameter: ~ 480 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Product

Zn-doped GaAs nanowires

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • diethylzinc
  • arsine
  • trimethanidogallium
  1. Ql3Zl1Zbyz6EvtBgZSXLmcwFhNMUjCJbSOF1snH3qQu29ytOJX5CD8zWydhHcQb6vja9Lzyx
  2. W0V9SJ6j77orX4Wtu47
  3. 6RYrwc
Product

Zn-doped GaAs nanowires

Diameter: ~ 415 nm

Medium/Support: none

References

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