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GaAs/AlGaAs quantum well

Based on

4 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Ga0.7Al0.3As
Role layer
2

gallium arsenide

Type Single Compound
Formula GaAs
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
acoustic phonon scattering time

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • trimethylaluminium
  • arsine
  • trimethanidogallium
  1. kCtqR4i1HbXlrU
Product

GaAs/AlGaAs quantum well

Thickness: 15 nm

Thickness: 300 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • trimethylaluminium
  • arsine
  • trimethanidogallium
  1. yri0R43aiaMk8m
Product

GaAs/AlGaAs quantum well

Thickness: 300 nm

Thickness: 5 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • trimethylaluminium
  • arsine
  • trimethanidogallium
  1. PfeM2TL88G6q7i
Product

GaAs/AlGaAs quantum well

Thickness: 2 nm

Thickness: 300 nm

Medium/Support: none

References

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