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EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

P-doped Si

Type Complex Compound
Formula
Role raw materials
2

titanium nitride

Type Single Compound
Formula TiN
Role layer
3

1-ethyl-3-methyl-1H-imidazol-3-ium tetrafluoroborate

1-ethyl-3-methyl-imidazolium tetrafluoroborate 3-ethyl-1-methyl-imidazolium tetrafluoroborate 1-ethyl-3-methylimidazolium tetrafluoroborate N-methyl-N-ethylimidazolium tetrafluoroborate 1-ethyl-3-methylimidazolium [C2MIM][BF4] [C2mim][BF4] [EMIM]-[BF4] [EMIM][BF4] [EMIM][BF4] [EMIm][BF4] [emim][BF4] EMIM[BF4] [EMIM]BF4 [Emim]BF4 EMIM-BF4 EMI[BF4] EMI[BF4] EMIMBF4 EMI-BF4 EMImBF4 EmimBF4 EMIBF4 [EMIM]
Type Single Compound
Formula C6H11BF4N2
Role loaded material

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
areal capacitance

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Applications

Area Application Nanomaterial Variant Source
energy storage

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Characterization

Method Nanomaterial Variant Source
dielectric spectroscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • P-doped Si
  1. G1W7Qyo8zkApZ
  2. oIV9Y0UiI7KiDXVEzhutUcukVsqo
Product

EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Pore depth: 10000 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • P-doped Si
  1. PMAjpnDjqUynr
  2. XO0kFChpYzIxi5ZNEPV8b8uXU5cO
Product

EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Pore depth: 2000 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  1. 4MQfmYpItYTvMXli6cc
Product

EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Pore depth: 12000 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • P-doped Si
  1. 0evMj2AyeOmjG
  2. DaGnf1qhMncY1eD44pVt8s0wTR9m
Product

EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Pore depth: 12000 nm

Pore diameter: 30 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • P-doped Si
  1. Ky2VbVhIJyFFE
  2. ac8rM81BVPpDdZLGBj9wWXJ2lyKb
Product

EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Pore depth: 12000 nm

Pore diameter: 50 nm

Medium/Support: none

References

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