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InAs/GaSb quantum well-based structure

Based on

1 Articles
2015 Most recent source

Composition

1

aluminium(III) antimonide

aluminium antimonide aluminum antimonide AlSb
Type Single Compound
Formula AlSb
Role layer
2

indium arsenide/gallium antimonide quantum well

InAs/GaSb quantum well InAs/GaSb QW
Type Nano Material
Formula
Role layer
3

aluminium(III) antimonide

aluminium antimonide aluminum antimonide AlSb
Type Single Compound
Formula AlSb
Role layer
4

gallium(III) antimonide

gallium antimonide
Type Single Compound
Formula GaSb
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • antimony
  • aluminium
  1. TMsy2tsO6f8Rj3YYHDZlJc2EwcKfNREEGj17kXwSW8BQNZr1frwyq
Product

InAs/GaSb quantum well-based structure

Thickness: 3 nm

Thickness: 50 nm

Medium/Support: none

References

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