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GaAs quantum wells with Si δ-doping layers separated by Al0.24Ga0.76As layers

Based on

1 Articles
2016 Most recent source

Composition

1

aluminium gallium arsenide

aluminum gallium arsenide aluminum-gallium arsenide
Type Single Compound
Formula Al0.24Ga0.76As
Role layer
2

silicon

Type Single Compound
Formula Si
Role layer
3

aluminium gallium arsenide

aluminum gallium arsenide aluminum-gallium arsenide
Type Single Compound
Formula Al0.24Ga0.76As
Role layer
4

gallium arsenide quantum well

GaAs quantum well GaAs QW
Type Nano Material
Formula
Role layer
5

aluminium gallium arsenide

aluminum gallium arsenide aluminum-gallium arsenide
Type Single Compound
Formula Al0.24Ga0.76As
Role layer
6

gallium arsenide quantum well

GaAs quantum well GaAs QW
Type Nano Material
Formula
Role layer
7

aluminium gallium arsenide

aluminum gallium arsenide aluminum-gallium arsenide
Type Single Compound
Formula Al0.24Ga0.76As
Role layer
8

silicon

Type Single Compound
Formula Si
Role layer
9

aluminium gallium arsenide

aluminum gallium arsenide aluminum-gallium arsenide
Type Single Compound
Formula Al0.24Ga0.76As
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
cyclotron resonance frequency

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Characterization

Method Nanomaterial Variant Source
terahertz time-domain spectroscopy

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References

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