Loading ...

germanium antimony telluride - indium tin oxide film

Based on

2 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

platinum

Type Single Compound
Formula Pt
Role layer
2

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role layer
3

germanium-antimony-tellurium

germanium-antimony-tellurium GST-225 GST
Type Single Compound
Formula Ge2Sb2Te5
Role layer
4

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
XY color gamut

More information available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
electronic paper

More information/entries available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
diffuse reflectance spectroscopy

More information/entries available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. hU
  2. N41kqI
Product

germanium antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: 2 nm

Thickness: < 300 nm

Medium: none

Support: SiO2 wafer

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. 0O
  2. p5s5Bh
Product

germanium antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: < 300 nm

Medium: none

Support: SiO2 wafer

Method 3

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. R7
  2. Z9rJS4
Product

germanium antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: 110 nm

Thickness: 7 nm

Medium: none

Support: SiO2 wafer

Method 4

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. pd
  2. cRKc53
Product

germanium antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: 7 nm

Thickness: 70 nm

Medium: none

Support: SiO2 wafer

Method 5

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. Kp
  2. MSeJnC
Product

germanium antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: 160 nm

Thickness: 7 nm

Medium: none

Support: SiO2 wafer

References

Full content is available to subscribers only

To view content please choose from the following:


Sign up for a free trial