Loading ...

AlGaAs-separated GaAs quantum wires

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
2

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Ga0.7Al0.3As
Role layer
3

gallium arsenide

Type Single Compound
Formula GaAs
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
conductance dependent on lower/upper wire

More information/entries available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

More information available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • GaAs/AlGaAs heterostructure
Product

AlGaAs-separated GaAs quantum wires

Center-to-center interwire separation: 33 - 41 nm

Length: ~ 4200 nm

Thickness: 15 nm

Thickness: 18 nm

Width: ~ 500 nm

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial