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InSe nanosheets

Based on

22 Articles
2018 Most recent source

Composition

1

indium(II) selenide

indium selenide
Type Single Compound
Formula InxSe
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap dependent on calculation

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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high-resolution transmission electron microscopy
photoluminescence
Raman spectroscopy
selected area electron diffraction
transmission electron microscopy

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • indium(II) selenide
Product

InSe nanosheets

Lateral size: 73.72-76.72 nm

Monolayer step thickness: 0.9 nm

Thickness: 1.23-3.99 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • indium(II) selenide
Product

InSe nanosheets

Lateral size: 111.32-114.68 nm

Monolayer step thickness: ~0.9 nm

Thickness: 1.5-5.08 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • indium selenide
  1. 8bCiVFGtKdKHCGnJpXWpMlhi8E2sL5SbZLf33W0
  2. Q0dhElaX
  3. tOy
  4. HxYxo
Product

InSe nanosheets

Thickness: 5.0 - 6.7 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • indium selenide
  1. Eq42n89V1oa6VnwFdIp6bhvZimtP9Z6T5DIFJIp
  2. RWitXEtt
  3. 1ds
  4. iKBuV
Product

InSe nanosheets

Thickness: 5.0 - 6.7 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • indium(II) selenide
Product

InSe nanosheets

Lateral size: 158.42-161.58 nm

Thickness: 5.69-8.01 nm

Medium/Support: none

References

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