Loading ...

spin memory device material

Based on

1 Articles
2015 Most recent source

Composition

1

gallium-indium arsenide

gallium-indium arsenide InGaAs
Type Complex Compound
Formula
Role layer
2

indium gallium arsenide quantum dots

In(Ga)As quantum dots InGaAs quantum dots InAs/GaAs QD In(Ga)As QD InGaAs QDs InGaAs QD
Type Nano Material
Formula
Role fillers
3

aluminium gallium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Al0.3Ga0.7As
Role layer
4

gallium-indium arsenide

gallium-indium arsenide InGaAs
Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electron spin relaxation dynamics

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
data storage

More information available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
photoluminescence

More information available to subscribers only.

Or, view sample content

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial