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suspended graphene disks on hole-patterned SiO2/Si substrate

Based on

6 Articles
1 Patents
2018 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

amorphous silicon dioxide

amorphous silicic oxide amorphous silica
Type Single Compound
Formula SiO2
Role layer
2

Bernal stacked bilayer graphene

artificially stacked graphene two-layer stacked graphene stacked bilayer graphene two-layer graphene stack double layer graphene double-layer graphene 2L stacked graphene graphene electrode two layer graphene bi-layer graphene 2L graphene stack bilayer graphene graphene AB-BLG 2-LG BLG
Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap

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Applications

Area Application Nanomaterial Variant Source
electrodes/electrolytes

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Characterization

Method Nanomaterial Variant Source
extended X-ray absorption fine structure

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide coated silicon
  • graphene
Product

suspended graphene disks on hole-patterned SiO2/Si substrate

Thickness: 285 nm

Medium: none

Support: silicon

Method 2

Type: Physical formation
Source:
  1. 8fgj4FhSxM6v7mHGyRh4Zp9
Product

suspended graphene disks on hole-patterned SiO2/Si substrate

Hole radius: 2160 nm

Thickness: 100 nm

Medium: none

Support: silicon

Method 3

Type: Physical formation
Source:
  1. byUcatnPEIVruN77bEhllj8
Product

suspended graphene disks on hole-patterned SiO2/Si substrate

Hole radius: 1560 nm

Thickness: 100 nm

Medium: none

Support: silicon

Method 4

Type: Physical formation
Source:
  1. ywhQsq4mjjLa8LDANz5zVxi
Product

suspended graphene disks on hole-patterned SiO2/Si substrate

Hole radius: 150 nm

Thickness: 100 nm

Medium: none

Support: silicon

Method 5

Type: Physical formation
Source:
  1. CJpMxwanVymlt6dIkpN8SqV
Product

suspended graphene disks on hole-patterned SiO2/Si substrate

Hole radius: 450 nm

Thickness: 100 nm

Medium: none

Support: silicon

References

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