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GaAs QW with Al0.3Ga0.7As barriers

Based on

1 Articles
2014 Most recent source

Composition

1

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
2

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Ga0.7Al0.3As
Role layer
3

Al0.3Ga0.7As/GaAs film

Type Nano Material
Formula
Role layer
4

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Ga0.7Al0.3As
Role layer
5

gallium arsenide

Type Single Compound
Formula GaAs
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
quantum droplets formation in ultrashort optical pulses-induced electron-hole plasma

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  1. J0upD14dZdD9O1p1S0WsTzYvwcqPS43t5xriiUFRyOU6N834zoQ7l4dueRL
  2. 07sfj12nPJKJW94AgKg2qNTWrnG
Product

GaAs QW with Al0.3Ga0.7As barriers

Thickness: 10 nm

Thickness: 300 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  1. IH7O7aXbtnCPXMgomBQTANhXfS0f3iZIyVKGLdxYl1oKPTBB1zQS0Q7c0kz
  2. EizPStygecG9nHKT3IXaSscl109
Product

GaAs QW with Al0.3Ga0.7As barriers

Thickness: 10 nm

Thickness: 300 nm

Medium/Support: none

References

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