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silicon carbide film

Based on

8 Articles
4 Patents
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon carbide

carborundum
Type Single Compound
Formula SiC
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
density of states

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Applications

Area Application Nanomaterial Variant Source
engineering

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Characterization

Method Nanomaterial Variant Source
field emission scanning electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • doped silicon carbide
  1. kto4PXAj4V
  2. etzbMnVa6n
  3. glqg4wOEgTFLDSjqythoMF
Product

silicon carbide film

Size: not specified

Medium: none

Support: doped silicon carbide

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • doped silicon carbide
  1. ntcwwKYqlr
  2. yuEbFgR
  3. 59Xy0NQ71PWtlEdDB7rJ3t
Product

silicon carbide film

Thickness: ~ 3 nm

Medium: none

Support: doped silicon carbide

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • doped silicon carbide
  1. uU5TK2rySW
  2. 6BRpZxEIb
  3. KTnXpL7oUf6rW2eoMSqJfU
Product

silicon carbide film

Thickness: ~ 3 nm

Medium: none

Support: doped silicon carbide

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • doped silicon carbide
  1. 5vzEX7GBm1
  2. RnKVIhOvCW
  3. ogxou6xEzJD8fyUzMdrB3d
Product

silicon carbide film

Thickness: ~ 3 nm

Medium: none

Support: doped silicon carbide

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • doped silicon carbide
  1. cpbmrSc59N
  2. SGJPxzW
  3. 3GSpF7TsRL3ABJkFilcIvW
Product

silicon carbide film

Thickness: ~ 17 nm

Medium: none

Support: doped silicon carbide

References

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