Loading ...

amorphous SiC/4H-SiC structure

Based on

8 Articles
4 Patents
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon carbide

carborundum
Type Single Compound
Formula SiC
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
density of states

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
engineering

More information/entries available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
field emission scanning electron microscopy

More information/entries available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • doped silicon carbide
  1. RqJjreCOgy
  2. 9drmfYsI2e
  3. 0UwrgNXE05PrJgJO9VrvrL
Product

amorphous SiC/4H-SiC structure

Size: not specified

Medium: none

Support: doped silicon carbide

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • doped silicon carbide
  1. zCj7Np9pVZ
  2. dTxK8x5
  3. oMgO8Mu4G3PIv3puq9mBMz
Product

amorphous SiC/4H-SiC structure

Thickness: ~ 17 nm

Medium: none

Support: doped silicon carbide

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • doped silicon carbide
  1. qvcPSIJo1J
  2. xABszVQ
  3. YfkbJ7MnJJ4nfmlIvqUxpT
Product

amorphous SiC/4H-SiC structure

Thickness: ~ 3 nm

Medium: none

Support: doped silicon carbide

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • doped silicon carbide
  1. Z003BgjSeF
  2. LTuuJZZUK
  3. rGzOUGsFBtPlHYwJv5cMyL
Product

amorphous SiC/4H-SiC structure

Thickness: ~ 3 nm

Medium: none

Support: doped silicon carbide

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • doped silicon carbide
  1. pNZP4XSDyy
  2. hvmQzaRegN
  3. endVJ5DEeb3mL27MO95qaC
Product

amorphous SiC/4H-SiC structure

Thickness: ~ 3 nm

Medium: none

Support: doped silicon carbide

References

Full content is available to subscribers only

To view content please choose from the following:


Sign up for a free trial