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InAs/GaSb core-shell nanowires

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

InAs nanowires

InAs NW
Type Nano Material
Formula
Role core
2

gallium(III) antimonide

gallium antimonide
Type Single Compound
Formula GaSb
Role layer

Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. 6H464G
  2. xkV9L
Product

InAs/GaSb core-shell nanowires

Radius: ~ 50 nm

Thickness: > 20 - < 25 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  1. 4ih6WW
  2. EkPY9
Product

InAs/GaSb core-shell nanowires

Radius: ~ 50 nm

Thickness: ~ 11 - 12 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  1. KW8zmy
  2. JgHLf
Product

InAs/GaSb core-shell nanowires

Radius: ~ 50 nm

Thickness: ~ 2 - 3 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  1. Cm3m7X
  2. X244z
Product

InAs/GaSb core-shell nanowires

Radius: ~ 50 nm

Medium: none

Support: silicon/GaSb

Method 5

Type: Chemical synthesis
Source:
Starting materials
  1. ZWWZUc
  2. 3ogcf
Product

InAs/GaSb core-shell nanowires

Radius: ~ 50 nm

Thickness: > 5 - < 10 nm

Medium/Support: none

References

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