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(Ga,Mn)As thin film

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

(Ga,Mn)As

Type Complex Compound
Formula
Role layer
2

2,3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane

2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane tetrafluoro-7,7,8,8-tetracyanoquinodimethane tetrafluoro-tetracyano-quinodimethane tetrafluoro tetracyanoquinodimethane tetrafluoro-tetracyanoquinodimethane tetrafluorotetracyanoquinodimethane F4-TCNQ F4-TCNQ F4TCNQ F4TCNQ
Type Single Compound
Formula C12F4N4
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
Curie temperature

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Characterization

Method Nanomaterial Variant Source
X-ray photoelectron spectroscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. y33JNULlgWpCGAej
  2. 3pm7q8q46apqfL7n
  3. ffY7R
  4. xlKXH
Product

(Ga,Mn)As thin film

Thickness: 1 - 3 nm

Thickness: 9 nm

Medium: none

Support: gallium arsenide

Method 2

Type: Chemical synthesis
Source:
Starting materials
  1. HyByAmWswBvhDu5h
  2. 764Dt5XfBUHcBuEx
  3. eIDUZ
  4. b8w0u
Product

(Ga,Mn)As thin film

Thickness: 1 - 3 nm

Thickness: 10 nm

Medium: none

Support: gallium arsenide

Method 3

Type: Physical formation
Source:
Starting materials
  • (Ga,Mn)As
  • gallium arsenide
  1. wnbX8D
Product

(Ga,Mn)As thin film

Thickness: 3 nm

Thickness: 5 - 10 nm

Medium: none

Support: gallium arsenide

Method 4

Type: Chemical synthesis
Source:
Starting materials
  1. POiyFIGdgr4MAXqx
  2. MxaweQkkPeMCGJUp
  3. TocD1
  4. sCRiO
Product

(Ga,Mn)As thin film

Thickness: 1 - 3 nm

Thickness: 5 nm

Medium: none

Support: gallium arsenide

Method 5

Type: Physical formation
Source:
Starting materials
  • (Ga,Mn)As
  • gallium arsenide
  1. j9lXFt
Product

(Ga,Mn)As thin film

Thickness: 1 nm

Thickness: 5 - 10 nm

Medium: none

Support: gallium arsenide

References

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