Loading ...

InGaN nanorods

Based on

3 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium gallium nitride

InGaN
Type Complex Compound
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
adsorption energy of gallium adatom

More information available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
optoelectronics

More information available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

More information/entries available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  1. 4J0VRyD4dBY
Product

InGaN nanorods

Diameter: ~ 62 nm

Height: ~ 225 nm

Medium: none

Support: silicon

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  1. XUt8ZqGyPHJ
Product

InGaN nanorods

Diameter: ~ 61 nm

Height: ~ 220 nm

Medium: none

Support: silicon

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  1. I9aPy7lRmYj
Product

InGaN nanorods

Diameter: ~ 46 nm

Height: ~ 227 nm

Medium: none

Support: silicon

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  1. z4WMCEZbUlp
Product

InGaN nanorods

Diameter: ~ 38 nm

Height: ~ 157 nm

Medium: none

Support: silicon

Method 5

Type: Physical formation
Source:
Starting materials
  • magnesium-doped gallium nitride
Product

InGaN nanorods

Diameter: ~ 515 nm

Height: ~ 95 nm

Pitch: ~ 750 nm

Support thickness: ~ 25 nm

Medium: none

Support: magnesium-doped gallium nitride

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial