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p+Si/nSi/SiO2/TiO2/Ir

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

boron doped silicon

p-doped Si
Type Complex Compound
Formula
Role layer
2

phosphorus-doped silicon

n-doped Si
Type Complex Compound
Formula
Role layer
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role layer
4

titanium(IV) oxide

titanium dioxide titanium oxide titania
Type Single Compound
Formula TiO2
Role layer
5

iridium

Type Single Compound
Formula Ir
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
cyclic voltammogram dependent on solution composition

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Applications

Area Application Nanomaterial Variant Source
power generation

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • phosphorus-doped silicon
  1. mjcpn
Product

p+Si/nSi/SiO2/TiO2/Ir

Thickness: 2 nm

Thickness: ~ 1.3 nm

Thickness: ~ 16 - 20 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • phosphorus-doped silicon
  1. uNYLO
Product

p+Si/nSi/SiO2/TiO2/Ir

Thickness: 2 nm

Thickness: ~ 1.3 nm

Thickness: ~ 80 - 100 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • phosphorus-doped silicon
  1. A4LTw
Product

p+Si/nSi/SiO2/TiO2/Ir

Thickness: 2 nm

Thickness: ~ 1.3 nm

Thickness: ~ 12 - 15 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • phosphorus-doped silicon
  1. f9ZhH
Product

p+Si/nSi/SiO2/TiO2/Ir

Thickness: 2 nm

Thickness: ~ 1.3 nm

Thickness: ~ 64 - 80 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • phosphorus-doped silicon
  1. iu7Yr
Product

p+Si/nSi/SiO2/TiO2/Ir

Thickness: 2 nm

Thickness: ~ 1.3 nm

Thickness: ~ 8 - 10 nm

Medium/Support: none

References

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