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Au/Ti/Ta2O5/MoS2/HfO2/SiO2/Si

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role layer
2

few-layer molybdenum(IV) sulfide monolayer

quadruple-layer molybdenum disulfide film multilayered molybdenum disulfide few-layer molybdenum(IV) sulfide few-layer molybdenum disulfide molybdenum sulfide nanosheets molybdenum disulfide flakes four-layer MoS2 nanosheets few-layer MoS2 nanosheets molybdenum sulfide flakes few-layered MoS2 crystals quadruple-layer MoS2 film layered MoS2 2D material few-layer MoS2 monolayer few-layer MoS2 crystals four-layer MoS2 flakes few-layer MoS2 flakes two-dimensional MoS2 few-layers of MoS2 3L MoS2 nanoflakes multilayered MoS2 4-monolayer MoS2 MoS2 nanosheets multilayer MoS2 four-layer MoS2 few-layer MoS2 MoS2 crystals MoS2 flakes
Type Nano Material
Formula
Role partial layer
3

tantalum pentoxide

tantalum(V) oxide tantalum oxide
Type Single Compound
Formula O5Ta2
Role layer
4

titanium

Type Single Compound
Formula Ti
Role partial layer
5

gold

Type Single Compound
Formula Au
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current density

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • tetrakis(dimethylamido)-hafnium(IV)
Product

Au/Ti/Ta2O5/MoS2/HfO2/SiO2/Si

Spacing: 750 - 5000 nm

Strip width: 60000 nm

Thickness: 3 nm

Thickness: 30 nm

Thickness: 40 nm

Thickness: 5 nm

Medium: none

Support: SiO2/Si

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • tetrakis(dimethylamido)-hafnium(IV)
Product

Au/Ti/Ta2O5/MoS2/HfO2/SiO2/Si

Spacing: 750 - 5000 nm

Strip width: 60000 nm

Thickness: 2.5 nm

Thickness: 3 nm

Thickness: 30 nm

Thickness: 40 nm

Medium: none

Support: SiO2/Si

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • tetrakis(dimethylamido)-hafnium(IV)
Product

Au/Ti/Ta2O5/MoS2/HfO2/SiO2/Si

Spacing: 750 - 5000 nm

Strip width: 60000 nm

Thickness: 1.5 nm

Thickness: 3 nm

Thickness: 30 nm

Thickness: 40 nm

Medium: none

Support: SiO2/Si

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • tetrakis(dimethylamido)-hafnium(IV)
Product

Au/Ti/Ta2O5/MoS2/HfO2/SiO2/Si

Spacing: 750 - 5000 nm

Strip width: 60000 nm

Thickness: 0.5 nm

Thickness: 3 nm

Thickness: 30 nm

Thickness: 40 nm

Medium: none

Support: SiO2/Si

References

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