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GaN template with single-layer NVPC and SiNx layer

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type Single Compound
Formula GaN
Role layer
2

silicon-rich silicon nitride

Si-reached silicon nitride silicon nitride a-SiNx SRSN
Type Single Compound
Formula SiN(x)
Role layer

Characterization

Method Nanomaterial Variant Source
UV

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • u-GaN layer on c-plane sapphire
  • silicon hydride
See all (4)
Product

GaN template with single-layer NVPC and SiNx layer

Thickness: 80 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • u-GaN layer on c-plane sapphire
  1. IsuJxfWNRXfPvGM42x3qG0mC9mrDtkEKuzLP8FmZBU
Product

GaN template with single-layer NVPC and SiNx layer

Interlayer distance: ~ 400 nm

Nano-void height: ~ 500 nm

Nano-void width: ~ 300 nm

Periodicity: 550 nm

Thickness: 80 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • u-GaN layer on c-plane sapphire
  1. 3kk7fxdNwtrofDzHgZTeEqMEbxkIL7JwEuH0MEaazw
Product

GaN template with single-layer NVPC and SiNx layer

Nano-void height: ~ 500 nm

Nano-void width: ~ 300 nm

Periodicity: 550 nm

Thickness: 80 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • u-GaN layer on c-plane sapphire
  1. wfK7yHVi6IccbrGcvB1wJjOvHmL4Omw3qOBarsk6Dl
Product

GaN template with single-layer NVPC and SiNx layer

Interlayer distance: ~ 400 nm

Nano-void height: ~ 500 nm

Nano-void width: ~ 300 nm

Periodicity: 550 nm

Thickness: 80 nm

Medium/Support: none

References

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