Loading ...

core-multishell GaAs/Al0.4Ga0.6As quantum well tubes

Based on

1 Articles
2015 Most recent source

Composition

1

GaAs nanowires

Type Nano Material
Formula
Role core
2

aluminium gallium arsenide

gallium aluminium arsenide aluminum gallium arsenide Al0.4Ga0.6As GaAlAs
Type Single Compound
Formula Al0.4Ga0.6As
Role layer
3

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
4

aluminium gallium arsenide

gallium aluminium arsenide aluminum gallium arsenide Al0.4Ga0.6As GaAlAs
Type Single Compound
Formula Al0.4Ga0.6As
Role layer
5

gallium arsenide

Type Single Compound
Formula GaAs
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap

More information/entries available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
photoluminescence

More information/entries available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

core-multishell GaAs/Al0.4Ga0.6As quantum well tubes

Diameter: 50 nm

Thickness: 1.46 - 2.74 nm

Thickness: 16 nm

Thickness: 23 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
Product

core-multishell GaAs/Al0.4Ga0.6As quantum well tubes

Diameter: 100 nm

Thickness: 1.8 - 2.2 nm

Thickness: 32 nm

Thickness: 46 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
Product

core-multishell GaAs/Al0.4Ga0.6As quantum well tubes

Diameter: 100 nm

Thickness: 3.72 - 4.28 nm

Thickness: 32 nm

Thickness: 46 nm

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial