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patterned GaAs (001)

Based on

11 Articles
2017 Most recent source

Composition

1

gallium arsenide

Type Single Compound
Formula GaAs
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
photoluminescence intensity

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Applications

Area Application Nanomaterial Variant Source
catalysis

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
  1. gi89Kq2j6
  2. GyWCkmoPXVxV0SbEjDY
Product

patterned GaAs (001)

Pattern periodicity: 46 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
  1. Saz9QNg5w
  2. Jaon8S9CpxJTkYe2FOx
  3. KvPcSv3vUORfrnsNJEA
Product

patterned GaAs (001)

Pattern periodicity: 90 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
  1. iQr0RiOE4
  2. RpROVfPwS5qV6fRDMKd
  3. 3WUH4x9ssCwNNp3FOh
Product

patterned GaAs (001)

Pattern periodicity: 65 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
Product

patterned GaAs (001)

Intercenter pit distance: 240 nm

Pit depth: ~ 50 nm

Pit width: 120 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
Product

patterned GaAs (001)

Intercenter pit distance: 800 nm

Pit depth: ~ 50 nm

Pit width: 400 nm

Medium/Support: none

References

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