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patterned GaAs (001)

Based on

12 Articles
2018 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium arsenide

Type Single Compound
Formula GaAs
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
photoluminescence intensity

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Applications

Area Application Nanomaterial Variant Source
catalysis

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
  1. YzLSIF9F9
  2. 5gbt30IYMbHynI5q9OJ
  3. q4K5WptWce6IfgJ9hH
Product

patterned GaAs (001)

Pattern periodicity: 65 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
  1. bEhM3fbyi
  2. yULl1UfMtN1ElmV56q1
  3. A48SY1zkwU1n7w4ls7A
Product

patterned GaAs (001)

Pattern periodicity: 90 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
  1. 2YqQa1WA0
  2. 6TzVCjdcyIDG9HeJioz
Product

patterned GaAs (001)

Pattern periodicity: 46 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
Product

patterned GaAs (001)

Intercenter pit distance: 400 nm

Pit depth: ~ 50 nm

Pit width: 200 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
Product

patterned GaAs (001)

Intercenter pit distance: 320 nm

Pit depth: ~ 50 nm

Pit width: 160 nm

Medium/Support: none

References

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