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MoSx, Ga2O3-coated Zn-doped WZ GaP nanowires

Based on

1 Articles
2015 Most recent source

Composition

1

gallium phosphide

Type Single Compound
Formula GaP
Role core
2

zinc(II) cation

zinc dication zinc(2+) ion zinc(II) ion zinc cation Zn2+ ion zinc ion zinc(2+) zinc(II) Zn ion Zn(2+) Zn2+
Type Single Compound
Formula Zn2+
Role dopant
3

gallium(III) oxide

gallium oxide
Type Single Compound
Formula Ga2O3
Role layer
4

molybdenum sulfide

Type Single Compound
Formula MoS(x)
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
energy conversion efficiency

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Applications

Area Application Nanomaterial Variant Source
power generation

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. BR8XFUq8WB1e
Product

MoSx, Ga2O3-coated Zn-doped WZ GaP nanowires

Size: not specified

Medium/Support: none

References

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