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hydrogen ion-doped indium gallium zinc oxide film

Based on

1 Articles
2015 Most recent source

Composition

1

indium gallium zinc oxide

IGZO
Type Single Compound
Formula In0.65Ga0.75Zn0.53O2.45
Role layer
2

indium gallium zinc oxide

IGZO
Type Single Compound
Formula In0.65Ga0.75Zn0.53O2.45
Role layer
3

hydrogen cation

hydrogen ion H+ ion proton H+
Type Single Compound
Formula H1+
Role dopant

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy for electrical conduction dependent on temperature

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. fQ9EYw6gqMxoUEzrw3
Product

hydrogen ion-doped indium gallium zinc oxide film

Thickness: 30 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  1. DXZJQUCu6SCOERW0Lr
Product

hydrogen ion-doped indium gallium zinc oxide film

Thickness: 10 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  1. CeZ8qvRVwYnM9sMlq8
Product

hydrogen ion-doped indium gallium zinc oxide film

Thickness: ~ 100 nm

Thickness: ~ 20 nm

Thickness: ~ 80 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  1. XPXlzwb3nhcPB7hkzM
Product

hydrogen ion-doped indium gallium zinc oxide film

Thickness: 50 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  1. 0cvwImF1PdVbFfhIlX
Product

hydrogen ion-doped indium gallium zinc oxide film

Thickness: 70 nm

Medium/Support: none

References

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