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photoresist AZ2020 nanoholes array

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

photoresist AZ2020

Type Complex Compound
Formula
Role raw materials

Characterization

Method Nanomaterial Variant Source
field emission scanning electron microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • photoresist AZ2020
  1. rCMtWXGymFU29fHBJlN1ho6k4jAdye1mY6BvqSwjNNdgvDXLUd
  2. uFRGQPAUIJQoJZ1Lz
Product

photoresist AZ2020 nanoholes array

Hole diameter: ~ 500 nm

Pitch size: ~ 900 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • photoresist AZ2020
  1. Qq3odCRnxjGu6cF1S6ijmKm81WtMQzijQID8ol2GWnWIkXZiTQ
  2. bACpN1JYt3QRvvAjG
Product

photoresist AZ2020 nanoholes array

Hole diameter: ~ 200 nm

Pitch size: ~ 400 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • photoresist AZ2020
  1. tcIOl8QBoOva1Yssaxs5TkSPbbt0f4PXVW76Y9xjiNw7GaVkpA
  2. nQLVOG3Wbf1akhaI2
Product

photoresist AZ2020 nanoholes array

Hole diameter: 150 nm

Pitch size: 300 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • photoresist AZ2020
  1. 4uwD17O29IAtjd7YTHsI5V6teDDEujS6EdSqsRopGOJOD9IoN5
  2. V9Ehb2ATZpvoS1yEM
Product

photoresist AZ2020 nanoholes array

Line width: ~ 290 - ~ 300 nm

Pitch: ~ 530 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • photoresist AZ2020
  1. 6FfpRKACplWHDp7WEsc4nOJIDxFcH82vTecmuVSU57NgoddCPK
  2. vWAmZN1IP9cdXDq8r
Product

photoresist AZ2020 nanoholes array

Line width: ~ 190 - 200 nm

Pitch: ~ 388 nm

Medium/Support: none

References

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