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Si-doped GaN nanowires

Based on

10 Articles
1 Patents
2018 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium nitride

Type Single Compound
Formula GaN
Role raw materials
2

silicon(IV) ion

silicon ion
Type Single Compound
Formula Si4+
Role dopant

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap

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Catalytic properties

Reaction Value Nanomaterial Variant Source
hydrogen evolution reaction

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Applications

Area Application Nanomaterial Variant Source
catalysis

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • silicon hydride
  • trimethanidogallium
See all (4)
  1. MQERVlnO
  2. YOkgqVo
Product

Si-doped GaN nanowires

Length: 880 nm

Pitch size: 500 nm

Radius: ~ 20 nm

Roughness: < 1 nm

Medium: none

Support: sapphire

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • silicon hydride
  • trimethanidogallium
See all (4)
  1. Ivd2TqdE
  2. 4MonTrk
Product

Si-doped GaN nanowires

Length: ~ 850 nm

Pitch size: 500 nm

Radius: ~ 20 nm

Roughness: < 1 nm

Medium: none

Support: sapphire

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • silicon hydride
  • trimethanidogallium
See all (4)
  1. ZbAgADBE
  2. hZuYZ8r
Product

Si-doped GaN nanowires

Length: 840 nm

Pitch size: 500 nm

Radius: 60 nm

Roughness: < 1 nm

Medium: none

Support: sapphire

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • silicon hydride
  • trimethanidogallium
See all (4)
  1. ZBTr3kFJ
  2. TieyMFp
Product

Si-doped GaN nanowires

Length: ~ 840 nm

Pitch size: 500 nm

Radius: ~ 42 nm

Roughness: < 1 nm

Medium: none

Support: sapphire

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • silicon hydride
  • trimethanidogallium
See all (4)
  1. 0jDeyei7
  2. 6ujGrLN
Product

Si-doped GaN nanowires

Length: ~ 840 nm

Pitch size: 500 nm

Radius: ~ 30 nm

Roughness: < 1 nm

Medium: none

Support: sapphire

References

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