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InAs0.961Sb0.039 nanowires

Based on

2 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium arsenide antimonide

Type Single Compound
Formula InAs0.961Sb0.039
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • tertiary-butyl-arsine
  • trimethylindigane
  • tris(dimethylamido)antimony(III)
  1. 2NybncWdbsCFpoL10NMMp
  2. r9lGr1fM85evbsnYjnV5
  3. W3qLIqE5Bh0Of8zhpCOISh
  4. Cve53tIqnlVFgyHkZKwr4AxFq
  5. 7QaBHg
Product

InAs0.961Sb0.039 nanowires

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic tetramer
  • antimony
  • indium
  1. 649nlPq6rztq6TPTj7YuZcD
  2. giu6k
  3. tiOz03
Product

InAs0.961Sb0.039 nanowires

Diameter: 60 - 180 nm

Length: 1700 - 2500 nm

Medium/Support: none

References

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