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Bi2Te3 thin film on GaAs (001)

Based on

1 Articles
2015 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role layer
2

Bi2Te3 quintuple layer

Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electrical conductivity

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Applications

Area Application Nanomaterial Variant Source
heat transfer

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) arsenide
  1. n63vhG
  2. oyUrtcbJATF
Product

Bi2Te3 thin film on GaAs (001)

Thickness: 100 nm

Thickness: ~ 160 nm

Medium: none

Support: gallium(III) arsenide

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) arsenide
  1. k5muZG
  2. fc9QKrrj0Ha
Product

Bi2Te3 thin film on GaAs (001)

Thickness: 100 nm

Thickness: 47 nm

Medium: none

Support: gallium(III) arsenide

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) arsenide
  1. LHKIXm
  2. 5uOujHQEzJN
Product

Bi2Te3 thin film on GaAs (001)

Thickness: 100 nm

Thickness: 240 nm

Medium: none

Support: gallium(III) arsenide

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) arsenide
  1. G2Ny4C
  2. XXXgUuLDLym
Product

Bi2Te3 thin film on GaAs (001)

Grain size: ~ 100 - 2000 nm

Thickness: 100 nm

Thickness: 11 - 1000 nm

Medium: none

Support: gallium(III) arsenide

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) arsenide
  1. ESW0h0
  2. yO2WI4ls6T1
Product

Bi2Te3 thin film on GaAs (001)

Thickness: 100 nm

Thickness: ~ 116 nm

Medium: none

Support: gallium(III) arsenide

References

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