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InGaAs/Cr/graphene forming compact multi-turn tubular structures

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium gallium arsenide

Type Single Compound
Formula In0.2Ga0.8As
Role layer
2

chromium

Type Single Compound
Formula Cr
Role layer
3

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role layer

Characterization

Method Nanomaterial Variant Source
Raman spectroscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  1. WGlVvE2eRnDagPBRzmFgOpd0l8BRYvV
Product

InGaAs/Cr/graphene forming compact multi-turn tubular structures

Length: 100000 nm

Thickness: 15 nm

Thickness: 9.2 nm

Tube radius: 718 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  1. bSUJSu6EPU5PsOvYTHQYWlXmOG0YKer
Product

InGaAs/Cr/graphene forming compact multi-turn tubular structures

Thickness: 15 nm

Thickness: ~ 17.5 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  1. fM1DGDg7B5xO7blvJNXfFQOjKw3dSy6
Product

InGaAs/Cr/graphene forming compact multi-turn tubular structures

Length: 100000 nm

Thickness: 15 nm

Thickness: ~ 17.5 nm

Tube radius: ~ 1050 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  1. tuQ6nt4wa301QcJdOiQrVTV3qYsEwPp
Product

InGaAs/Cr/graphene forming compact multi-turn tubular structures

Length: 100000 nm

Thickness: 15 nm

Thickness: ~ 16.5 nm

Tube radius: ~ 920 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  1. 0WmfyJxBYs6oBBrGez8QwTOTfWUah1Y
Product

InGaAs/Cr/graphene forming compact multi-turn tubular structures

Length: 100000 nm

Thickness: 15 nm

Thickness: ~ 11 nm

Tube radius: ~ 800 nm

Medium/Support: none

References

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